发明名称 |
Method for producing an alternating phase mask |
摘要 |
A carrier has a surface with a mask layer thereon. An irradiation-sensitive layer on the mask layer is exposed and developed to form a first exposure structure. The first exposure structure is used as an etching mask while the mask layer is etched. The first exposure structure is subsequently removed. A second irradiation-sensitive layer is applied to the mask layer and the carrier. The second irradiation-sensitive layer is exposed with a first exposure dose and a second exposure dose. The second irradiation-sensitive layer is subsequently developed to form a second exposure structure with a first and second exposure structure thickness. The carrier is etched down to a first etching depth in the region of the first exposure structure thickness and down to a second etching depth in the region of the second exposure structure thickness. The first etching depth is larger than the second etching depth.
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申请公布号 |
US6569772(B2) |
申请公布日期 |
2003.05.27 |
申请号 |
US20020075540 |
申请日期 |
2002.02.14 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MATHUNI JOSEF;KNOBLOCH JUERGEN;NOELSCHER CHRISTOPH |
分类号 |
G03F1/00;(IPC1-7):H01L21/311 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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