| 摘要 |
The invention provides a technology for reducing the direct contact resistance and for reducing the junction leak while maintaining the punch through margin. A semiconductor integrated circuit device is provided which comprises: a substrate; a transistor formed on the substrate, which comprises a source, a drain and a gate which controls a current flowing from said source to said drain; and a contact plug being electrically connected to at least one of the source and drain and made of a conductive material including a dopant. The contact plug is formed of at least a first layer and a second layer. The first layer contacts with one of the source and drain and is made of said material including the dopant of a first concentration. The second layer is formed of a layer of said material including the dopant of a second concentration, which is lower than the second concentration.
|
