| 摘要 |
An insulation is formed on a substrate of a material having a first conductivity type. A gate material is formed on the insulation. A portion of the gate material is removed thereby creating forming mesa type gate structures from remaining positions of the gate material. The mesas are then insulated. A channel forming layer, of a material having a second conductivity type, is formed between the produced mesas. Finally, a source of a material having the first conductivity type is formed on the channel forming layer.
|
