发明名称 Semiconductor device having resistive element
摘要 A trench is formed in an n+ type substrate in a vertical direction from a main surface of the substrate, and a p type layer is deposited in the trench to have a recess portion. An n+ type layer is embedded in the recess portion. Accordingly, the p type layer is formed, as a resistive element, into a U-shape with ends that are ended on the main surface of the substrate. The resistive element has a resistance length corresponding to a path of the U-shape.
申请公布号 US6570239(B2) 申请公布日期 2003.05.27
申请号 US20010804188 申请日期 2001.03.13
申请人 DENSO CORPORATION 发明人 SAKAKIBARA JUN;YAMAGUCHI HITOSHI
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/06;H01L29/10;H01L29/423;H01L29/78;H01L29/8605;(IPC1-7):H01L21/26 主分类号 H01L27/04
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