METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DIODE

摘要

FIELD: semiconductor laser diode manufacturing technique. SUBSTANCE: method includes manufacture of semiconductor laser heterostructure based on compounds of third- and fourth-group elements, its separation into strips, cleaning of their side faces in vacuum, their covering with shielding coat followed by deposition of reflecting coating on one of side faces and antireflecting coating on opposite side face; strips are preheated to 580-760 C before cleaning side faces of semiconductor laser heterostructure strips and then cooled down to 0-240 C, whereupon side surfaces of strips are covered with 0.1 to 1000 single layers of iodine or bromine, or chlorine and heated to 580-760 C. In the course of heating and cooling of semiconductor laser heterostructure strips vapors of fifth-group elements included in semiconductor laser heterostructure are supplied to them. EFFECT: preventing flaws in near- surface layer of strips during their cleaning and degradation of laser diode in service. 2 cl