| 摘要 |
The power of a device under test (DUT) is monitored without reliance on dedicated current and voltage monitoring signals available from a semiconductor test unit. One or more magneto-resistive current sensors are provided external to, and in between the DUT and a power source. The current sensor(s) provide a detection signal proportional to the current drawn by the device from the power source. A monitoring circuit multiplies the detected current by the core voltage supply to the DUT to obtain a signal representative of the power of the device. The power signal is provided to a control circuit that operates a heat exchanger, such as on active conductive heat exchanger, to adjust the temperature of the device based on the signal representative of the power of the device. In this way the temperature of the DUT can be maintained at or near a constant set point.
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