VERTICAL TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PURPOSE: A vertical transistor and its manufacturing method are provided to increase the current of a collector by lowering a resistance of the collector. CONSTITUTION: An N type epitaxial layer(12) is grown on an upper face of a P type substrate(2). An N- buried layer(4) is diffused between the P type substrate(2) and the N type epitaxial layer(12). A P++ buried layer(6) is diffused between the N- buried layer(4) and the N type epitaxial layer(12). An N+ well(16) is formed on the N type epitaxial layer(12) of an upper portion of the P++ buried layer(6). A P+ emitter region(18) is formed on the N+ well(16). An N+ base region(19) is formed on the N+ well(16) adjacent to the P+ emitter region(18). A P+ collector region(14) is formed on the N type epitaxial layer(12).