发明名称 |
X-RAY DETECTOR |
摘要 |
PURPOSE: An X-ray detector is provided to remove a charge trapping phenomenon from an upper portion of a switching device in an X-ray irradiation process by forming island patterns on an upper portion of a thin film transistor. CONSTITUTION: An optical conversion portion receives X-rays and generates electric charges. A charge storage portion includes a lower storage electrode(140), a dielectric layer, and an upper storage electrode(150) in order to collect the electric charges from the optical conversion portion. A bias line(160) is connected with the lower storage electrode. A switching portion discharges the electric charges from the charge storage portion and includes a gate line(110) and a source/drain(120a,120b). A transparent electrode(170) is formed on an upper face of the switching portion.
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申请公布号 |
KR20030040836(A) |
申请公布日期 |
2003.05.23 |
申请号 |
KR20010071423 |
申请日期 |
2001.11.16 |
申请人 |
BOE HYDIS TECHNOLOGY CO., LTD. |
发明人 |
LIM, BYEONG CHEON;YOO, BONG RYEOL |
分类号 |
H01L31/115;(IPC1-7):H01L31/115 |
主分类号 |
H01L31/115 |
代理机构 |
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