MEMORY DEVICE AND INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide an FAMOS memory location which can have at least three completely natural program levels. SOLUTION: An FAMOS memory location is provided with a single floating gate (GR) overlapping the active plane of a semiconductor substrate along contour (PF1, PF2) of at least two asymmetric overlaps in order to determine at least two electrodes in an active region. A memory location program means (MC, SW) applies a set of specified different voltages selectively to the electrodes such that at least three program logical levels are outputted to the memory location.