| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor where a procedure for removing a cap film used for protecting a substrate is not required and to provide the manufacturing method. SOLUTION: In a silicon carbide semiconductor device, an impurity region into which impurities are introduced by using ion implanting method is formed in the silicon carbide substrate. The surface of the silicon carbide substrate 100 is capped by an epitaxial layer 5 and metal reacting to silicon, such as nickel, tungsten, titanium, tantalum and white gold is used as the material of an electrode 9 formed on the upper face of the impurity region.
|
