| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high performance bipolar transistor, wherein the resistance between emitter and base electrodes is reduced and high speed operation is enabled, and to provide method for manufacturing the semiconductor device. SOLUTION: In this semiconductor device, the bipolar transistor is formed to have an epitaxial base region, formed on a semiconductor substrate and formed of a silicon mixed crystal layer 9 consisting of silicon layers 9A, 9C and a layer 9B having silicon and other group IV element, and a silicide 11 is formed on the part of the silicon mixed crystal layer 9 which serves as an extraction electrode via a polycrystalline silicon film 10. Further, when this semiconductor device is manufactured, insulating film 5, 8 are formed on the semiconductor substrate, and the silicon mixed crystal layer 9 is formed through epitaxial growth, to include an opening formed in the region of the insulating films 5, 8 where the bipolar transistor is formed, and the polycrystalline silicon film 10 is formed on the part of the silicon mixed crystal layer 9 which serves as a base extraction electrode, and the silicide 11 is formed on the surface of the polycrystalline silicon film 10.
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