| 摘要 |
PROBLEM TO BE SOLVED: To prevent adverse effects on the interface between silicon and a thin film due to organic contamination, when the thin film is formed on the silicon surface of a substrate having the silicon surface. SOLUTION: A method for manufacturing a semiconductor device comprises a thin-film forming process for forming the thin film on the silicon surface of the substrate, having the silicon surface. The thin film forming process comprises the steps of increasing the temperature to a first temperature region, so that the silicon surface becomes non-contact with an oxidizing gas, subjecting the silicon surface to a first thin-film forming treatment in the first temperature region, and subjecting the silicon surface, subjected to the thin-film forming treatment, to a second thin-film forming treatment in a second temperature region higher than the first temperature region.
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