| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion-implantation control system and an ion-implantation control method that can prevent variations in the electrical characteristics of a transistor or the like. SOLUTION: A sheet resistor for measuring characteristics in a monitor wafer, where ions are implanted by an ion-implanting machine, is provided, and the amount of ion implantation, according to the set amount of implantation of the ion-implanting machine, is adjusted by a regular control monitor based on the measurement result of the sheet resistor concerned, thus appropriately implanting ions to a semiconductor wafer, and hence restraining variations in the electrical characteristics of a transistor or the like.
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