| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for adhering exposure masks for performing high-grade exposure, and a projection aligner even in a near-field exposure method for improving adhesion properties between a mask for exposure and a substrate, and preparing a finer pattern than the wavelength of exposure light. SOLUTION: When an exposure mask 3 having a pattern containing an opening that is smaller than the wavelength of exposure light is used, and the exposure mask 3 is adhered to a substrate 5 in advance before the exposure of the pattern is performed to the substrate 5 where a photoresist layer is formed, the exposure mask 3 is stacked on the substrate 5 and they are sandwiched by press rollers 13a and 13b, and the press rollers 13a and 13b are relatively moved to the exposure mask 3 and substrate 5, thus forcing out gas remaining between the exposure mask 3 and substrate 5 from both interfaces.
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