| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to be capable of improving degradation of photo sensitivity due to a photodiode having narrow area compared to a unit pixel. CONSTITUTION: A n- diffusion layer is formed in a p- epitaxial layer(22) and includes the first n- diffusion layer(23a) and the second deep n- diffusion layer(23b), wherein the second n- diffusion layer(23b) has a relatively wide area compared to the first n- diffusion layer(23a). A p0 diffusion layer(24) is formed in the first n- diffusion layer(23a). A gate electrode(25) is formed on the p- epitaxial layer(22), wherein one edge of the gate electrode(25) is arranged to one edge of the first n- diffusion layer(23a). A p+ diffusion layer(27) is formed on the second deep n- diffusion layer(23b) and arranged to the other edge of the gate electrode. At the time, the fully depletion is performed at the n- diffusion layer.
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