发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device, having improved moisture resistance and reliability capable of coping with external temperature change, without impairing the functions of a semiconductor package. SOLUTION: In the semiconductor device, an electrode terminal forming surface of a semiconductor element 10a is covered with an electrically insulating layer 20A. A rewiring pattern 14, whose one end is connected to an electrode terminal 12 and the other end is connected to an external connection terminal 16, is provided on the surface of the insulating layer 20A. The insulating layer 20A consists of a phenolic resin. Further, the surface of the insulating layer 20A, including the rewiring pattern 14, is covered with an electrically insulating overcoat layer 22A, and the overcoat layer 22A consists of a phenolic resin.
申请公布号 JP2003151981(A) 申请公布日期 2003.05.23
申请号 JP20010351656 申请日期 2001.11.16
申请人 SHINKO ELECTRIC IND CO LTD 发明人 IIJIMA TAKAHIRO;TAKANO AKIHITO;YAMANO KOJI;YOSHIHARA TAKAKO;SEKI MYOTAN
分类号 H01L23/52;H01L21/312;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/48;H01L23/522 主分类号 H01L23/52
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