| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing composition which has high selectivity, in which the polishing rate for copper is large but the polishing rate for a tantalum compound is small and is superior in giving smoothness of surface to a copper- film in a CMP work process for a semiconductor device, having a copper film and a tantalum compound. SOLUTION: The polishing composition is composed of (A) an abrasive, (B) pyridinecarboxylic acid, (C) an organic acid, (D) hydrogen peroxide, and (E) water, where the abrasive is a composite composed of at least one from among fumed silica, colloidal silica, fumed alumina, and colloidal alumina, and the size of the primary grains of the abrasive is 0.01-0.2μm.</p> |
