| 摘要 |
PROBLEM TO BE SOLVED: To provide a low cost high dielectric strength IC and its manufacturing method by forming a 1st well area and a 2nd well area which forms a dielectric strength junction termination structure by one photomask. SOLUTION: The 1st well area 1 where a floating reference circuit is formed, and the 2nd well area 2 which forms the dielectric strength junction terminating structure, are formed by the one photomask. The photomask is so formed as to partially open a resist mask for forming the 2nd well area and, even when ions are injected into the 1st well area 1 and 2nd well area 2 at the same time, the impurity density of the 2nd well area 2 after heat diffusion can be made less than that of the 1st well, so that the dielectric strength junction terminating structure (resurf structure) can be obtained. |
