| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-permittivity insulating film and a semiconductor device using it, the insulating film being able to be used as a gate insulating film of an MOSFET having improved leakage and break down voltage characteristics, improved surface smoothness and a relatively high permittivity, and enabling microfabrication and miniaturization. SOLUTION: The semiconductor device has a semiconductor substrate 4 and the high-permittivity insulating film 8, formed directly or via an other layer on the surface of the semiconductor substrate 4. The main component of the high-permittivity insulating film 8 is a bismuth laminar compound, and the c axis of the bismuth laminar compound is oriented to be perpendicular to the surface of the semiconductor substrate, and the bismuth laminar compound is expressed by the composition formula: (Bi2 O2 )<2+> (Am-1 Bm O3+1 )2- or Bi2 Am-1 Bm O3m+3 , where m is a positive number, a symbol A denotes at least one element selected from among Na, K, Pb, Ba, Sr, Ca and Bi, and symbol B denotes at least one element selected from among Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W.
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