| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the impurity concentration of active layers having different thicknesses is controlled to be constant and the dispersion of a characteristic can be made remarkably small. SOLUTION: When the maximum value of the active layer film thicknesses 407 and 408 of multiple active elements constituting an integrated circuit is set to be TSOI(max) , and the minimum value to be TSOI(min) in the integrated circuit formed on a single crystal semiconductor layer 403 on an insulating film 402; the ratio of the maximum value and the minimum value of the impurity concentrations of the active layers 407 and 408 is set to be not more than TSOI(max) /TSOI(min) . The manufacturing method has a process (drawings 1 (b) and (c)) for introducing impurity ions into the single crystal semiconductor layer 403 on the insulating film 402, a process (d) for uniformly diffusing the ions to a depth direction in the single crystal semiconductor layer 403, a process (e) for removing a part of the surfaces of the single crystal semiconductor layers 407 and 408, and processes (f) and (g) for making layers whose thicknesses become thin in the removing process to be the active layers of the multiple active elements.
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