| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to be capable of restraining the generation of dark current due to dangling bonds generated on the surface of a photodiode. CONSTITUTION: A buried photodiode is formed in a semiconductor substrate(31). A transfer gate(34), a reset gate, a drive gate and a select gate are formed on the substrate. The first interlayer dielectric(39a) having hydrogen ions, such as silicon oxynitride, is formed on the resultant structure. The second interlayer dielectric(39b), such as BPSG, is formed on the first interlayer dielectric. The second interlayer dielectric(39b) is planarized by reflowing, and hydrogen ions in the first interlayer dielectric(39a) are simultaneously diffused into the surface of the photodiode.
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