| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device, which realizes reduction in cost by effectively performing the etching of silicon substrate in the lower cost. SOLUTION: The method of the manufacturing semiconductor device comprises the steps of producing a silicon substrate 32 of the SOI structure from a silicon substrate 31, where oxide film 31a is formed and then grinding the silicon substrate 31 where the oxide film 31a is formed to obtain thin silicon substrate. In this method, under the condition of plasma etching being applied to the process to form thin silicon substrate 31, that the product PL of discharge pressure P of a mixed gas of oxygen and fluorine gas supplied to the processing chamber with an electrode-to-electrode distance L lies within the range of 2.5 [Pa.m] to 15 [Pa.m], the plasma discharge is generated between these parallel electrode plates. Accordingly, reduction in cost of semiconductor device is realized through the low-cost and high efficiency etching.
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