| 摘要 |
PURPOSE: A transistor of a semiconductor device and a manufacturing method thereof are provided to be capable of improving the refresh operating characteristic of a DRAM device and preventing the generation of coupling noise due to shielding effect by using a sub-electrode. CONSTITUTION: A gate electrode(44) connected with the first voltage power supply(500), is electrically isolated from a semiconductor substrate(41) by using a gate oxide layer(43). A source(47s) is formed at one side of the gate electrode(44) in the semiconductor substrate(41). A drain(47d) is formed at the other side of the gate electrode(44). A sub-electrode(400) connected with the second voltage power supply(600), is formed at both sides of the gate electrode(44), wherein the sub-electrode(400) is electrically isolated from the gate electrode(44), the source and drain(47s,47d) by using an oxide layer(46). A constant voltage is conserved between the gate electrode(44) and a bit line by using the sub-electrode(400), thereby preventing the generation of coupling noise. |
