METHOD FOR WRITING INTO MEMORY ARRAY COMPRISING A PLURALITY OF THREE TERMINAL MEMORY CELLS

摘要

PROBLEM TO BE SOLVED: To provide an inexpensive memory array comprising reliable memory cells. SOLUTION: The memory element comprises a memory array of thin film memory cells. The memory cell includes a floating gate isolated from the gate electrode part of a gate line by means of an insulator. The gate electrode part includes a conductor being diffused into the insulator under a state applied with a writing voltage. The diffused conductor forms a conductor path for connecting the gate line with the floating gate and varies the gate capacity thus varying the state of the memory cell. The memory cell is a three terminal element and a read current does not flow through the conductor path of the memory cell during read operation. Since the read current does not impedes the storage mechanism of the memory cell, the memory cell is rendered robust. The memory array can be fabricated through a plurality of steps using the same mask.