发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure capable of omitting unnecessary members for a circuit constitution of low thermal resistance and capable of being miniaturized, and to provide the manufacturing method of the same device. SOLUTION: The semiconductor device is manufactured by a method wherein a resin insulation layer precursor is formed on the surface of a metallic base plate 19, at least one through hole 15 is formed on the metallic base plate 19 and the insulation layer precursor, lead frame 13 is bonded on the surface of the resin insulation layer precursor, a part of the lead frame 13 opposing to the position of the through hole 15 is cut, circuit chips 11, 17 are disposed on and fixed to the lands 131, 132 and 133 of the lead frame 13, the fixed circuit chips 11, 17 and/or lands 131, 132 and 133 of the lead frame are electrically connected, and the circuit is molded by a seal resin.
申请公布号 JP2003152159(A) 申请公布日期 2003.05.23
申请号 JP20010347502 申请日期 2001.11.13
申请人 HITACHI LTD 发明人 OGAWA TOSHIO;YAGAWA MASAYUKI;NAKATSU KINYA;TANI SHOGO;SASAKI YASUSHI
分类号 H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
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