| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for the manufacture of a power semiconductor device including a large sized heat sink comprising a composite material and of a power semiconductor device capable of inexpensively and stably manufacturing a large-sized heat sink comprising a composite material. SOLUTION: A region of a base metal 2 is formed around a dispersion member 3, and portions of the base metal 2 are welded with each other to manufacture a composite material 1. A plurality of the small-sized composite members 1 are welded using a laser beam and an electron beam to manufacture a large heat sink 11. There is provided the heat sink 11 which is obtained by connecting through the metal host material 2 a plurality of the composite materials 1 including the dispersion member 3 and further including the base metal 2 around the dispersion member 3. |
