| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a mark for confirming positional alignment which can accurately form the mark without the risk of erroneous recognition and displacement in the positional alignment. SOLUTION: A first photoresist film 26 is formed on a second silicon oxide film 25 formed on the upper surface of a semiconductor substrate 21 provided, at its upper part, with a main scale 24 which is intermittently formed in a square ring shape. The first photoresist film 26 is then patterned to form a first resist pattern 29 including a vernier portion 27 which is intermittently formed as a square ring opening within the ring shape of the main scale 24. During this process, a groove 28 surrounding the vernier portion 27 at a predetermined interval is formed at the first resist pattern 29. |
