| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can make turning of its internal voltage generating circuit in a short time. SOLUTION: An internal generated voltage Vref varies according to the settings of fuses in tuning circuits 64 to 70 of the internal voltage generating circuit 52. A simulated state of a blown fuse can be entered by 4-bit signals TSIG1 to TSIG4 which can be varied from the outside. The internal generated voltage Vref is varied and compared by a comparator 448 dedicated to decision making to decide settings of the fuses to be held. The internal voltage which varies with a digital value becomes stable in a short time, so a test time can be made much shorter than that of constitution which performs tuning while varying an analog voltage. Preferably, the signals TSIG1 to TSIG4 are inputted directly from address terminals only when a test is conducted to make it easier to perform control and shorten the time.
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