发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce loss of a signal caused by a pad of a semiconductor substrate. SOLUTION: The semiconductor device 100 is equipped with the pad 112 formed on the semiconductor substrate 110, an FET 114 which receives a signal inputted to the pad 112, a capacitor 116 which is inserted between the pad 110 and FET 114, and a switching element 122 which is connected in parallel to the capacitor 116. For a test, the switching element 122 is turned on, and the pad 112 and the gate of the FET 114 are short-circuited.
申请公布号 JP2003152084(A) 申请公布日期 2003.05.23
申请号 JP20010347282 申请日期 2001.11.13
申请人 NIIGATA SEIMITSU KK 发明人 MIYAGI HIROSHI
分类号 H01L27/04;G01R31/28;G01R31/317;G01R31/3185;H01L21/82;H01L21/822;(IPC1-7):H01L21/822 主分类号 H01L27/04
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