| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein emitter resistance is increased and reliability is lowered, in a method for manufacturing a self-aligned bipolar transistor of conventional technology, since voids occur at the deposition of an emitter N<+> -type polysilicon because the aspect ratio of an opening for emitter formation is large in the transistor. SOLUTION: Before forming an emitter polysilicon 15, sidewall insulating films are formed at an opening at the upper part of an emitter formation area, resist is embedded in between the sidewall insulating films, and the upper parts of the sidewall insulating films are etching-removed to lower the heights of the sidewall insulating films. Thus, the emitter polysilicon 15 embedded to the lowered sidewall insulating films 13c comes to have structure free of voids, and an effective emitter of 0.2μm or shorter than this is obtained.
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