发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and its method for prolonging the life time of a process liquid for etching and the like, while necessary processing accuracy is being maintained, and realizing the measurement of concentration with accuracy. SOLUTION: A substrate processing apparatus 35, in which a process liquid DHF is fed to a substrate W and a prescribed quantity of processing is carried out, includes a temperature-detecting means for detecting the temperature of the process liquid DHF, a concentration detecting means for detecting the concentration of the process liquid, a time-detecting means 77 for detecting the time of lapse from the start of processing, a storing unit 75 for storing the relation of the temperature to the concentration of the process liquid DHF, the continuance of processing, the processing quantity of the process liquid DHF on the substrate W, and an operation unit 76 for calculating the calculated value of the processing quantity, on the basis of the relation, and seeking an integrated arithmetic value of the processing quantity, which is integrated by the time from the start of processing. In this case, the treatment is made to stop according to the integrate arithmetic value of the processing quantity.
申请公布号 JP2003151950(A) 申请公布日期 2003.05.23
申请号 JP20010349074 申请日期 2001.11.14
申请人 TOKYO ELECTRON LTD 发明人 FURUKAWA TAKAHIRO;KITAHARA SHIGENORI;IWAZU HARUO;MATSUMOTO TAKASHI;HIRAYAMA TSUKASA
分类号 G03F7/40;H01L21/027;H01L21/304;H01L21/306;(IPC1-7):H01L21/306 主分类号 G03F7/40
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