| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device whose configuration is simple and which can be functioned surely by unnecesitating a transistor or selection provided for every memory cell while considering peculiar conditions in a ferroelectroc substance. SOLUTION: This device is provided with a plurality of X axis electrode lines, a plurality of Y axis electrode lines intersecting orthogonally with these plurality of X axis electrode lines, and ferroelectric capacitors connected directly between both electrode lines at intersection positions of these X axis electrode lines and Y axis electrode lines, when a basic anti-electric field is assumed to Ec, write-in voltage is set to voltage being higher than 1.Ec and lower than 2.Ec.
|
