发明名称 CONTROL/GATE AND BOOSTING CIRCUIT OF WORD LINE VOLTAGE
摘要 <p>PROBLEM TO BE SOLVED: To provide a circuit and a semiconductor method which utilize capacitive coupling of a control/gate word line (a CG-WL). SOLUTION: In order to boost a control/gate voltage adjacent to a word line to be selected, capacitive coupling is utilized rather than generating a required boosting voltage through a decoder and a driver of a control/gate and a bit line. The voltage boosting method reduces the silicon region of an address/decoder, the degree of complexity of a decoder circuit is reduced, an address/decode/set-up time is reduced and no need is required to provide an excess voltage supply source for the address/decoder.</p>
申请公布号 JP2003151290(A) 申请公布日期 2003.05.23
申请号 JP20020197396 申请日期 2002.07.05
申请人 HALO LSI INC 发明人 OGURA NORI;OGURA SEIKI
分类号 G11C16/06;G11C8/08;G11C11/56;G11C16/04;G11C16/08;G11C16/30;H01L21/822;H01L21/8247;H01L27/04;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/06;H01L21/824 主分类号 G11C16/06
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