| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin-film semiconductor device and a method for manufacturing the device, where electrical characteristics are proper and the variations of the electrical characteristics is small, by forming a semiconductor film of the crystal grains of a large diameter with proper crystallization and controlling the position of a grain boundary in a channel formation area in the thin film semiconductor device formed on a substrate, and to provide the method for manufacturing the device. SOLUTION: On a quartz substrate 111, a base protective film 112 is formed, a first semiconductor film 113 is formed, a lower insulating film 114 is formed, and an active semiconductor film 115 is formed. Next, it is irradiated with YAG2ωlaser 116 from the side of the active semiconductor film 115, to grow the crystals of the active semiconductor film 115 in the horizontal direction. After this, a gate insulating film is formed and impurity ions are implanted in the vicinity of the grain boundary 119.</p> |
