发明名称 IMAGE SENSOR FOR MEASURING DARK CURRENT
摘要 PURPOSE: An image sensor for measuring dark current is provided to be capable of reducing dark current by using a test pattern. CONSTITUTION: An image sensor for measuring dark current comprises a pixel array for driving the image sensor and a test pattern for measuring the dark current generated at interface between an active and field region. The test pattern further includes the first test pattern(A,B,C) having the first photodiode and the second test pattern(A',B',C') having the second photodiode. At this time, the area and the size of depletion region of the second photodiode is substantially same to the first photodiode.
申请公布号 KR20030041043(A) 申请公布日期 2003.05.23
申请号 KR20010071772 申请日期 2001.11.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KO, HO SUN
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
代理机构 代理人
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