SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR MODULE, AND RAMAN AMPLIFIER USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor module which is suitable as an exciting light source for a Raman amplifier, surely provided with a non-current injection region, prevented from varying finely in laser output with a change in a drive current, and enables stable amplification of high gain to be realized. SOLUTION: A diffraction grating 13 is provided adjacent to a GRIN- SCH-MQW active layer 3 formed between a projection-side reflecting film 15 formed on a projection end face of a laser beam and a reflecting film 14 formed on a reflection end face of a laser beam and located close to the projection-side reflecting film 15. Furthermore, an n-InP layer 8 is formed over the diffraction grating 13 so as to prevent a current that flows from a p-side electrode 10 from being injected into the vicinity of the diffraction grating 13, and a non-current injection region E1 is formed so as to restrain an n- InPGaAsP diffusion preventing layer 8a from being alloyed with a p-side electrode 10.