| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method for obtaining a superior etching face, even when RIE (reactive ion etching) is carried out for an SiC substrate and the like. SOLUTION: A laminated pattern 5, with a prescribed pattern which includes a metallic pattern 21 of a metal layer and a resist pattern 31 as an resist layer covering the metallic layer, is provided at the main face of an SiC substrate as a base. The etching method includes a base etching step of carrying out RIE (reactive ion etching) on the SiC substrate with a mask of the laminated pattern 5.
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