| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor of a semiconductor element in which a leakage current and dielectric loss are reduced, and its manufacturing method. SOLUTION: The capacitor contains a first electrode 27 formed on a substrate, ferroelectric substance 29 which is formed on the electrode 27 and contains bismuth, a second electrode 31 formed on the ferroelectric substance containing bismuth, and amorphous bismuth oxide films 28, 30 which are interposed at least in one portion between the first electrode and the ferroelectric substance containing bismuth or between the ferroelectric substance containing bismuth and the second electrode.
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