| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device having small electric resistance and its manufacturing method. SOLUTION: A first clad layer 2, an active layer 4, a second clad layer 5, an etching stopper layer 6, a stripe-like third clad layer 7, and a contact layer 8 are laminated in this order on a semiconductor substrate 1. An insulating film 9 is formed so as to cover the etching stopper layer 6 and the third clad layer 7, keeping, at least, a part of the contact layer 8 uncovered, and an electrode 10 is formed so as to cover the uncovered part of the contact layer 8 and the insulating film 9 for the formation of a semiconductor laser device. A recess is provided on the contacting area of the contact layer 8 with the electrode 9.
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