| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is provided with a wide current injection stripe, hardly produces double peaks in a far-field pattern, and has a high optical output. SOLUTION: This semiconductor laser device has the same structure as a conventional one except that its current injection stripe 41 is different in a plan view from that of a conventional one. The width S1 of the center part of the current injection stripe 41 is equal to that of a conventional current injection stripe, whereas the width S2 of the projection end face 40a of the current injection stripe 41 is smaller than the width S1 . That is, the stripe 41 is gradually reduced in width or tapered at a taper angle ofθtoward the projection end face 40a from the point distant from the end face 40a by a distance of L. That is, the current injection stripe 41 is composed of a rectangular stripe 42 which is 20μm or above and constant in width on the plant in parallel with the surface of a substrate and a tapered stripe 43 which is continuously joined to the stripe 43 and gradually reduced in width toward the projection end face 40a.
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