| 摘要 |
PURPOSE: A method of making laser diode is provided to realize a blue laser diode of a high reliability by suppressing increase in a threshold current owing to a diffusion current of a side direction and adjusting a depth of a ridge. CONSTITUTION: A GaN layer(22) of the first conduction type, the first conduction-type clad layer, the first conduction-type waveguide layer, an active layer, an electron blocking layer, the second conduction-type waveguide layer and the first clad layer of the second conduction type are formed on a substrate(20). After forming an insulation layer(30) on the second conduction-type clad layer, the first clad layer of the second conduction type is exposed by patterning the insulation layer of a ridge formation region. The second clad layer(31) of the second conduction type is formed selectively on the first clad layer, and a ridge is formed by selectively forming a GaN layer of the second conduction type on the second clad layer. The first conduction-type GaN layer is exposed by mesa-etching the first clad layer, the first conduction-type waveguide layer, the active layer, the current blocking layer, the second conduction-type waveguide layer and the first clad layer of the second conduction type on the first conduction-type electrode formation region. The first conduction-type electrode(33) is formed on the first conduction-type GaN layer and the second conduction-type electrode(34) is formed on the second conduction-type GaN layer.
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