| 摘要 |
PROBLEM TO BE SOLVED: To suppress variantion in photodetection characteristic by securing high dimensional stability. SOLUTION: A semiconductor photodetecting element which has a lower clad layer 2, a light absorbing layer 3, and an upper clad layer 14 laminated on a semiconductor substrate 14 in this order, and carriers generated by absorbing light 15, made incident on a light incidence end surface 10 of the semiconductor substrate 14 and inputted to the light absorbing layer 3 through the lower clad layer 2, and absorbed by the light absorbing layer 3, are output as signal to the outside from a pair of electrodes 6 and 7 through the upper clad layer and lower clad layer. A light incidence end surface 10 is formed on an end surface perpendicular to a bottom surface 14a of the semiconductor substrate 14, and the lower clad layer 2, light absorbing layer 3, and upper clad layer 4 are formed on an oblique surface 14c slanting to the bottom surface 14a of the semiconductor substrate 14.
|
