| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating the cleanness of a silicon wafer in which the cleanness can be accurately evaluated with high reliability by obtaining a sufficient signal strength for the measurement of an SPV method for an N-type silicon wafer. SOLUTION: The method for evaluating the cleanness of the silicon wafer comprises the steps of treating the N-type silicon wafer with an SC-1 liquid used in an RCA cleaning method, then housing the wafer in a wafer case made of resin, preserving the wafer at 20 to 30 deg.C for 5 days or more, thereafter evaluating the cleanness of the wafer by measuring the surface photoelectric voltage.
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