METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND INFRARED DETECTING DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent deterioration due to difference of thermal expansion coefficient which is caused by heat cycle, and improve cooling efficiency, regarding a method for manufacturing a semiconductor device, a semiconductor device and an infrared detecting device. SOLUTION: In first semiconductor base substance 1, an Hg1-y Cdy Te (0<y<1) layer 3 for element formation is formed on a Cd1-x Znx Te (0<=x<0.05) substrate 2. A hybrid semiconductor device is formed by making the first semiconductor base substance 1 face second semiconductor base substance 4 and combining them by using combining electrodes 5. At least a part of the base substance 2 is eliminated from a rear side of the base substance 2 by using selective etching solution.