| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor having a metal silicide layer formed on the surface of a gate electrode and the surface of a heavily doped region and having a non-silicide region in a part of the heavily-doped region. SOLUTION: After forming the gate electrode 103 on a silicon substrate 100, ion implantation is performed with the gate electrode 103 as a mask to form low concentration impurity regions 104, and thereafter first sidewall spacer 105 are formed on the side surfaces of the gate electrode 103. Next, by using the gate electrode 103 and the first sidewall spacer 1-5 as a mask, ion implantation is conducted to form the heavily-doped region 106, and thereafter a second sidewall spacer 108 is formed on the first side wall spacer 105. After that, by using the first and sidewall spacers 105 and 108 as a mask, the metal silicide film 109 is formed on the respective surfaces of the silicon substrate 100 and the metal silicide film 109.
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