| 摘要 |
PROBLEM TO BE SOLVED: To add defect relieving functions to a plurality of semiconductor memory circuits, respectively by suppressing increment of circuit area without spoiling the defect relieving function. SOLUTION: Semiconductor memory circuits 10, 20 and a redundant circuit 30 realizing a defect relieving function are enabled to be connected, respectively, two semiconductor memory circuits 10, 20 shares the redundant circuit 30, when defect is caused in either of the semiconductor memory circuits 10, 20, the redundant circuit 30 is operated as one part in the semiconductor memory circuit, the defect relieving function can be added to two semiconductor memory circuit 10, 20 respectively by only adding one redundant circuit 30 and redundant changeover switch groups SWRA, SWRB.
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