| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to be capable of restraining the generation of dark current due to dangling bonds generated on surface of a photodiode. CONSTITUTION: A manufacturing method of an image sensor comprises the steps of CMOS logic processing, color filter formation processing, and microlens formation processing. At this time, after the CMOS logic processing, dangling bonds(DB) generated on a photodiode are removed by diffusing hydrogen ions into the surface of the photodiode. That is, an interlayer dielectric(39) having hydrogen ions is used as a passivation layer, and the hydrogen ions are diffused into the surface of the photodiode by annealing in hydrogen atmosphere.
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