| 摘要 |
PROBLEM TO BE SOLVED: To suppress a parasitic capacitance between electrodes or wirings in a semiconductor device having a self-aligned contact structure. SOLUTION: Silicon nitride films 5 and 10 are formed around a gate electrode 3 and a bit line 8 in order to define a position of a contact plug 13 in a self- alignment manner. Low dielectric constant insulation films 4a, 4b, 7, 9a and 9b, having dielectric constants lower than the dielectric constant of the nitride film, are formed between the gate electrode 3, the bit line 8, and the silicon nitride film 5 so as to be brought into contact with the gate electrode 3 and the bit line 8. By the existence of the low dielectric constant insulation films 4a, 4b, 7, 9a and 9b, the increase of a parasitic capacitance, which is caused by the existence of the silicon nitride films 5 and 10 between the gate electrode 3, the bit line 8, and the contact plug 13, can be suppressed. |
