FABRICATION METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a superior crystalline semiconductor film, without increasing the concentration in a catalyst element to be added to an amorphous semiconductor film and further without making complex a crystallization process. SOLUTION: An insulating film having stress, whose absolute value is at least 3×10<9> dynes/cm<2> , is formed on an amorphous semiconductor film that is formed on an insulator, an opening is provided for forming a mask insulating film, a catalyst element is added to the selective region of the amorphous semiconductor film for carrying out heating treatment, and a crystalline semiconductor film is formed.