HIGH-VOLTAGE LATERAL TRANSISTOR HAVING MULTILAYERED EXPANDED DRAIN STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a high-voltage transistor with a low on-state and that supports a high voltage in the off-state. SOLUTION: The high-voltage transistor with a low on-state and that supports a high voltage in the off-state includes one or more source regions disposed near a multi-layered extended drain structure which comprises extended drift regions separated from field plate members by one or more dielectric layers. With the field plate members at the lowest circuit potential, the transistor supports a high voltage applied to the drain in the off-state. The layered structure may be fabricated in a variety of methods. A MOSFET structure may be incorporated into the device near the source region, or the MOSFET structure may be omitted to produce a high-voltage transistor having a stand-alone drift region.